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May 23, 2008Applied Physics Express

Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment

Rongming Chu C. Poblenz Man Hoi Wong Sansaptak Dasgupta Siddharth Rajan Yi Pei F. Recht Likun Shen James S. Speck Umesh K. Mishra

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Abstract

Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment, Chu, Rongming, Poblenz, Christiane, Wong, Man Hoi, Dasgupta, Sansaptak, Rajan, Siddharth, Pei, Yi, Recht, Felix, Shen, Likun, Speck, James S., Mishra, Umesh K.

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Cite This Study

Chu et al. (2008) studied this question.

synapsesocial.com/papers/6aa91a078e6f6568fcacb6d5 https://doi.org/10.1143/apex.1.061101

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxyOriginal Research · 2001 · 124 citations
2Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBEOriginal Research · 2004 · 103 citations
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4V-Gate GaN HEMTs for X-Band Power ApplicationsOriginal Research · 2008 · 67 citations
5High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field PlatesOriginal Research · 2006 · 449 citations

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