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A layer of titanium dioxide (TiO2-NT) nanotubes 500 nm thick with average diameters of 60 nm is grown via anodizing. Memristive behavior typical of synthesized Ti/TiO2-NT/Au structures is observed in full cycles of resistive switching, and during the multiple reading of data. Impedance in the states of low (R LRS ≈ 3 Ohm) and high (R HRS ≈ 180 Ohm) resistance are estimated for the obtained memristors.
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Vokhmintsev et al. (2014) studied this question.
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