Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode

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Substrate threading screw dislocations (TSDs) in 4H-SiC materials propagate into the epilayer and cause breakdown holes in Schottky barrier diodes. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

Xuexia Zhang; Yanfang Lou; Tuochen Gong; Guangming Wang; Jing Yao; Qing Yong; Tonghua Peng; Jian Yang; Chunjun Liu

doi:10.1039/d3ce00295k

January 1, 2023CrystEngComm

Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode

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Abstract

Substrate TSDs propagate into an epilayer and cause breakdown holes.

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Zhang et al. (2023) studied this question.

synapsesocial.com/papers/6aaa4aea51a50b954dbe0149 https://doi.org/10.1039/d3ce00295k

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Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode

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Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode

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