Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors

A tunneling-current enhancement technology for Si-based tunnel field-effect transistors (TFETs) utilizing an Al–N isoelectronic trap (IET) has been proposed recently. In this study, we investigate hot implantation as a doping technique for Al–N isoelectronic impurity. Hot implantation reduces the damage induced by Al and N implantation processes, resulting in performance improvement of IET-assisted TFETs, e.g., a 12-fold enhancement in the driving current at an operation voltage of 0.5 V and an approximately one-third reduction in the subthreshold slope. By hot implantation, we can achieve a higher driving current in Si-based TFETs using the IET technology.