Answers are grounded in this paper and cite their sources.
InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, and presence or absence of a forming gas anneal can strongly affect NW device radiation hardness. Low-frequency noise measurements are carried out to probe near-interfacial oxide-trap (border-trap) densities, and TCAD simulations are performed to assist in understanding the charge trapping in NW channel devices with high-k gate dielectrics. Optimized device structures exhibit high radiation tolerance.
No takes yet. Share an insight, caveat, or question.
Ren et al. (2015) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: