The change in the recombination properties of plastically deformed silicon as a result of its interaction with an iron impurity introduced by diffusion at 1000°C has been studied using scanning electron microscopy and deep level transient spectroscopy. The recombination activity of dislocations and slip planes behind dislocations has been found to increase due to the accelerated formation of iron precipitates at these defects. Based on the measurements of the electron-beam-induced current, the concentration of the formed precipitates has been estimated, and their sizes have been calculated to be several hundred nanometers.
No takes yet. Share an insight, caveat, or question.
Feklisova et al. (2011) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: