Pulse-induced crystallization in phase-change memories under set and disturb conditions

We introduce a new technique to study the crystallization process in phase-change memory. By this technique, crystallization is characterized in the ON-state at extremely low currents, allowing to extend the time scale of crystallization times to more than two decades. To describe the pulse-induced crystallization in the set regime, we develop a finite-element method model based on localized conduction in the amorphous phase and non-Arrhenius crystallization kinetics. The range of crystallization times is then extended to even lower currents in the subthreshold regime, where the model allows describing the crystallization kinetics thus providing the physics-based prediction of read disturb.