The Ni-NiO-Ag Metal-Insulator-Metal (MIM) diodes were fabricated via electrochemical deposition, whose contact area was restricted to be 3.1 × 10 −4 μm 2 by the nanochannels of anodic aluminum oxide templates. The NiO insulating layer featuring an average thickness of 6 nm was grown by thermal oxidation, as revealed by transmission electron microscopy (TEM). The MIM diodes show a highly asymmetric and nonlinear I-V characteristic, with a maximum responsivity of 8.5 V −1 and a zero-bias responsivity of 5.8 V −1 , suggesting its great potential for high frequency application.
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Wang et al. (2015) studied this question.