The influence of hydrogen on the electrical properties of Pt/(Ba,Sr)TiO3/Pt thin film capacitors have been studied by secondary ion mass spectroscopy (SIMS) and thermal desorption spectroscopy (TDS) methods. From the analyses, it is suggested that in a BSTO thin film grown by RF sputtering, there exist two types of hydrogen with different energy states. One stays thermally stable in BSTO even at 600°C, and the other is thermally unstable and is released from BSTO above 450°C. When the Pt/BSTO/Pt capacitors were exposed to hydrogen-containing plasma, a pronounced hydrogen accumulation was observed at the Pt/BSTO interface in the SIMS profiles. The concentration of accumulated hydrogen at the interface is identical to that of the thermally unstable hydrogen that is released above 450°C. It is experimentally confirmed that thermally unstable hydrogen degrades the electrical properties of Pt/BSTO/Pt thin film capacitors, and its degradation mechanism is proposed.
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Morito et al. (2006) studied this question.
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