Soitec (France)

Recent papers from Soitec (France)

1. Mitigation of bipolar degradation in 4H-SiC power devices using engineered SiC substratesMaterials Science in Semiconductor Processing · 2026
2. Editorial Note — Issue 1/2026; The SSM Turns Ten: Challenges and Opportunities for the Banking SystemJournal of Financial Management Markets and Institutions · 2026
3. Effect of heat temperature on molecular weight and thermal properties of poly(3-hydroxybutyrate-co-3hydroxyvalerate) with different comonomer contentsPolymer Degradation and Stability · 2026
4. Lights, camera, action!Dental Nursing · 2026
5. Study of the Biosynthesis of Poly(3-hydroxybutyrate- co -3-hydroxyvalerate) with High Content in 3-Hydroxyvalerate Units by Cupriavidus necator H1 G ⁺ 3 (DSM 545)Biomacromolecules · 2026
6. Impact of hydrogen implantation on a transferred diamond layerDiamond and Related Materials · 2026
7. GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB)IEEE Electron Device Letters · 2026
8. 300 Mm sSOI engineering with ultra thin buried oxideSolid-State Electronics · 2025
9. A Simulation Study of High-Resistivity Substrates for RF ICsIEEE Journal of the Electron Devices Society · 2025
10. Origin of strain in H+ ion implanted LiTaO3 single crystalsAPL Materials · 2025
11. BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced ModelingIEEE Transactions on Electron Devices · 2025
12. Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime2025
13. C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes2025
14. High Temperature Evolution of Thin Films Confined between Two SiC Substrates2025
15. An understanding of fracture kinetics during the layer transfer of InPSolid-State Electronics · 2025
16. SmartSiC™ 150 & 200mm Engineered Substrate: Enabling SiC Power Devices with Improved Performances and Reliability2025
17. Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiCTM Engineered Substrates for High Volume Manufacturing2025
18. Temperature Dependence of 1200V-10A SiC Power Diodes Impact of Design and Substrate on Electrical Performance2025
19. Thermal strain management of III–V heterostructures grown on InP-on-silicon (InPoSi) substratesJournal of Applied Physics · 2025
20. Fracture dynamics in Smart Cut™ technology: Wafer deformation measurementSolid-State Electronics · 2025