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August 11, 2025Applied SciencesOpen Access

Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry

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Authors

JKJaesun KimSLSeungyoung LimGCGahyun Choi

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Overview

This technique improves temperature mapping of substrate and channel in GaN HEMTs, indicating potential for reliability enhancement.

Key Points

  • Self-heating in the GaN channel reached hotspots 100 °C above the surrounding temperature.
  • Raman spectroscopy achieved a measurement speed surpassing conventional spectrometers during testing.
  • This observational analysis provides simultaneous temperature mapping of both Si substrate and GaN channel.
  • The findings suggest implications for early defect detection, enhancing the reliability of semiconductor devices.

Cite This Study

Kim et al. (2025) studied this question.

synapsesocial.com/papers/68a360e00a429f797332953bhttps://doi.org/10.3390/app15147860
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  1. 1Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT2022 · 38 citations
  2. 2Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications2004 · 55 citations
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  4. 4Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures2006 · 262 citations