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September 10, 2025Open Access

The impact of pulse width modulation on heat accumulation in AlGaN channel HEMTs

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Authors

DMD. MyrenMJM. S. JamilBKBrianna Klein

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Overview

Experimental analysis quantifies pulse width effects on thermal resistance in AlGaN HEMTs, suggesting implications for safe frequency operation.

Key Points

  • Heat accumulation from pulse width modulation leads to underestimated peak temperatures.
  • The analysis indicates that transient Gate Resistance Thermometry provides absolute temperature measurements.
  • Differential temperature measurements can derive peak temperatures based on steady-state thermal resistance.
  • Thermal resistance evaluations in AlGaN HEMTs are critical for optimizing device performance.

Cite This Study

Myren et al. (2025) studied this question.

synapsesocial.com/papers/68c1bd3b54b1d3bfb60ee82ahttps://doi.org/10.1063/5.0279372
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  4. 4Thermal Characterization and Simulation of GaN-on-SiC HEMT Transistors in Transient and Steady-State Regimes2024 · 1 citations
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