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September 10, 2025Journal of Applied PhysicsOpen Access

Hybrid method for estimating peak channel temperature in AlGaN/GaN HEMTs using resistance thermal detector thermometry and a simplified analytical model

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Authors

ASArpit SahuJSJyoti SahuSBSubhajit Basak

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Overview

Analytical model estimates peak channel temperature in AlGaN/GaN HEMTs, highlighting temperature differences and thermal conduction nonlinearity.

Key Points

  • The analytical approach accurately estimates peak channel temperature in AlGaN/GaN HEMTs, improving thermal management.
  • Using a thermal model, it identifies the temperature difference between measured and calculated peak temperatures to enhance reliability.
  • The methodology incorporates Kirchhoff's transformation to address nonlinearity in thermal conduction, boosting accuracy.
  • Verification is performed through gate resistance temperature detector thermometry and simulations for various device parameters.

Cite This Study

Sahu et al. (2025) studied this question.

synapsesocial.com/papers/68c1afb954b1d3bfb60e70cchttps://doi.org/10.1063/5.0276951
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