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September 10, 2025Chinese Physics B

Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure

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Authors

PSPengfei ShaoYCYifan ChengYLYu Liu

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Overview

Analysis reveals that variations in p-GaN thickness affect the transport properties and density of 2DHG, implying significant implications for p-channel transistors.

Key Points

  • Increasing p-GaN thickness beyond 30 nm does not influence 2DHG sheet density, showing stabilizing effects.
  • Measurements indicate a high 2DHG sheet density of 2.2×10 13 cm -2 and a mobility rate of 16.2 cm 2 /V·s at room temperature.
  • Temperature-dependent Hall measurements and TCAD simulations were utilized to assess transport properties of the hole gases.
  • The research underscores the critical role of p-GaN thickness in shaping the performance characteristics of next-generation transistors.

Cite This Study

Shao et al. (2025) studied this question.

synapsesocial.com/papers/68c192579b7b07f3a0616dc6https://doi.org/10.1088/1674-1056/ae0397
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Also Consider

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  1. 1Observation of two-dimensional hole gas distribution and transport in GaN composite p-channel at cryogenic temperatures2026
  2. 2Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure2024 · 1 citations
  3. 3Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN/i‐Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N/GaN High‐Electron‐Mobility Transistors2024
  4. 4Transport characteristics of 2DHG in p-GaN/AlGaN/GaN heterojunction: impact of Mg dopant activation2026
  5. 5Temperature-Dependent DC Characteristics of GaN/InAlN/GaN HEMTs: GaN Cap Layer Thickness and Doping Effects2026