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May 22, 2026Applied Physics Letters

Observation of two-dimensional hole gas distribution and transport in GaN composite p-channel at cryogenic temperatures

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Authors

HZHao ZhangYZYifang ZhangCWChi Wang

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Overview

Randomized trial examines temperature effects on hole transport in GaN 2D/3D composite channels, suggesting insights for device performance.

Key Points

  • This study aims to investigate the temperature dependence of two-dimensional hole gas in GaN composite p-channels at cryogenic temperatures.
  • Observational analysis of hole transport across various temperature ranges: T > 200 K, 70 < T < 200 K, and T < 70 K.
  • Assessment of hole density variations influenced by freeze-out in bulk p-GaN and defect-band conduction.
  • At T > 200 K, hole density decreases exponentially with decreasing temperature due to bulk p-GaN freeze-out.
  • For 70 < T < 200 K, hole transport is primarily driven by the two-dimensional hole gas with weak temperature dependence.
  • Below 70 K, there is an increase in hole density attributed to enhanced defect-band conduction affecting the transport.

Cite This Study

Zhang et al. (2026) studied this question.

synapsesocial.com/papers/6a0ff351d674f7c03778beedhttps://doi.org/10.1063/5.0328558
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Also Consider

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  1. 1Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure2025
  2. 2Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy2024 · 7 citations
  3. 3Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure2024 · 1 citations
  4. 4Temperature-Dependent DC Characteristics of GaN/InAlN/GaN HEMTs: GaN Cap Layer Thickness and Doping Effects2026
  5. 5Parallel 2DHG conduction in AlN/GaN/AlN HEMTs: Leakage mechanisms and electric field distribution2026