Analytical model demonstrates 202% reduction in OFF-state leakage current in CE-MI GAA FET, highlighting enhanced performance in low-power applications.
In this manuscript, a comprehensive analytical model has been formulated for the Channel Engineered-Macaroni Induced (CE-MI) Gate All Around Field Effect Transistor (GAA FET), aimed at addressing the issue of OFF-state leakage current, specifically gate-induced drain leakage (GIDL), to enhance both the performance and reliability. The analytical modelling approach is grounded in the resolution of the two-dimensional Poisson equation, executed under rigorously defined boundary conditions. Furthermore, an extensive investigation of various parameters pertinent to the analog performance of the device is conducted. The proposed CE-MI-GAA FET demonstrates a remarkable 202% reduction in OFF-state leakage current compared to conventional GAA FETs. Additionally, the quality factor of the device exhibits an impressive improvement by a factor of 27, thereby positioning the device as highly suitable for low-power applications.
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Kaul et al. (2025) studied this question.
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