P‐1.12: Sub‐200nm Nano‐scale Indium‐Zinc‐Oxide Ultra‐thin Channel Transistors

Herein, nanoscale Indium‐Zinc‐Oxide (IZO) transistors are fabricated successfully in 5 nm channel thickness and 182.3 nm length, exhibiting excellent electrical properties including a high on‐state current (I on ) of 137 μA/μm, subthreshold swing (SS) of 70.87 mV/dec., turn‐on voltage (V on ) of ‐0.12 V, low drain induced barrier lowering of 22.7 mV/V and preferable hysteresis. Our findings promote application of oxide transistors in advanced high‐definition displays and integrated circuits.