P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors

Oxide transistors attract much attention in fields of displays and low‐cost integrated circuits (ICs). In the present work, IZO transistors were fabricated and the effects of active layer thickness on electrical characteristics of IZO transistors were studied. The devices with IZO thickness of 10 nm show the best electrical characteristics with a high on/off current ratio of 3.4×10 8 , a large field‐effect mobility (μFE) of 11.88 cm 2 /Vs, a small subthreshold swing (SS) of 178.10 mV/decade, and a reasonable turn‐on voltage (Von) of ‐0.3 V. It is demonstrated that IZO is a promising active layer material for future displays and IC applications.