What question did this study set out to answer?

To suppress direct current (dc) bias drift and improve operational stability in lithium niobate (LiNbO3) electro-optic modulators.

August 1, 1985Applied Physics Letters

Minimizing dc drift in LiNbO3 waveguide devices

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Authors

CGC. M. GeeThe Aerospace Corporation GTG. D. ThurmondCalifornia State University, Monterey Bay HBH. BlauveltCalifornia Institute of Technology

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Implication

Experimental study demonstrates reduced dc bias drift in LiNbO3 modulators using an indium tin oxide buffer layer, indicating improved stability for optical waveguides.

Key Points

To suppress direct current (dc) bias drift and improve operational stability in lithium niobate (LiNbO3) electro-optic modulators.
Substituted conventional silicon dioxide (SiO2) buffer layers with an indium tin oxide (ITO) transparent conductor exhibiting a sheet resistivity of ~20 Ω/⧠.
Measured long-term dc drift performance over an 8-hour window and modeled the underlying physical behavior using an electrical equivalent circuit.
Modulators incorporating the ITO buffer layer achieved a long-term dc drift of less than 0.3% over 8 hours.
Equivalent circuit modeling verified that replacing the dielectric buffer with a conductive layer prevents the charge accumulation driving bias drift.

Cite This Study

Gee et al. (1985) studied this question.

synapsesocial.com/papers/6a03318fbc3ffe278e655161 https://doi.org/10.1063/1.96220

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Implication

Experimental study demonstrates reduced dc bias drift in LiNbO3 modulators using an indium tin oxide buffer layer, indicating improved stability for optical waveguides.

Minimizing dc drift in LiNbO3 waveguide devices

Discussion

Member takes

Implication

Key Points

Cite This Study

Minimizing dc drift in LiNbO3 waveguide devices

Discussion

Member takes

Implication

Key Points

Cite This Study

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