Investigation on the gate failure of Schottky-type p-GaN HEMTs based on electrical and optical characterization

This work systematically investigates the gate reliability of Schottky-type p-GaN HEMT under static and dynamic conditions using an optical-electrical method. Time-dependent electroluminescence (TDEL) is employed to analyze the light emission from the p-GaN gate, revealing the carrier injection dynamics and physical mechanism underlying gate failure. This work provides insights for optimizing GaN power devices for high-reliability applications.