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Buried p +-type layers have been produced in silicon substrates by implanting boron ions of 3 or 8 MeV with doses of 1012-3·1014 cm−2 Experimental techniques such as junction staining, capacitance-voltage and electrical sheet measurements, have been used to evaluate carrier concentration profiles, electrical activity, and effective mobility of the buried layers as a function of temperature in the range of 350-1000°C.
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Kostka et al. (1973) studied this question.
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