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A model is presented which relates MOS processing steps and design parameters to the ionizing radiation sensitivity of hardened MOS devices. The model is based on combining the viscous properties of SiO/sub 2/ at typical processing temperatures with stresses arising in the SiO/sub 2/ on Si system during oxidation and subsequent high-temperature cycles. The model explains the recently observed dependence of radiation-induced flatband voltage shifts upon SiO/sub 2/ thickness cubed. Quantitative comparison with experiment is obtained for the relations of flatband voltage shift on post-oxidation annealing temperature and on oxide growth temperature. Several processing changes to further harden both dry and wet oxides are suggested by the model.
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EerNisse et al. (1976) studied this question.
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