Radiation hard 1.0μm CMOS technology

This paper describes radiation test results of a radiation hard CMOS technology with 1.0 μm minimum geometry features. The radiation goals of this technology are to ensure the MOS devices are functional after 10 Mrad total dose irradiation, are single event upset hardened to less than 1E-10 errors per bit-day, are transient upset immune to 1E9 rads/sec and are latch-up free.