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A quantitative model is developed that can accurately predict the threshold voltage shift, and hence data loss, in SNOS nonvolatile memory transistors over a wide range of dose rates. The model accounts for both the time dependent and radiation induced mechanisms leading to data loss. Experimental measurements are made to verify the validity and accuracy of the model under a variety of irradiation conditions.
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McWhorter et al. (1987) studied this question.
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