Charge buildup at high dose and low fields in SIMOX buried oxides

Trapped charge buildup was measured and modeled as a function of dose and applied oxide field, epsilon /sub ox/, for a representative SIMOX (separation by implantation of oxygen) buried oxide. The dominant physical processes controlling the buildup are shown to be space-charge-driven modification of epsilon /sub ox/ and recombination of electrons with trapped holes in low-field regions of the oxide.>