Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 mu m. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6*10 17 cm -3 .
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Ehrlich et al. (1993) studied this question.
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