Role of the mid-gap level as the dominant recombination center in platinum doped silicon

The problem of identification of the dominant recombination center in platinum-doped silicon is investigated using deep-level transient spectroscopy (DLTS). Measurements using electrical and optical injection on platinum-doped n type silicon are reported. Results of measurements show that the recently observed platinum-related midgap level is an efficient recombination center and is probably responsible for the role of platinum as a lifetime killer. In addition, information is provided on the relative magnitudes of the electron and hole capture cross sections of the hitherto well-known deep levels assigned to platinum.