In this letter, we demonstrate a novel surface passivation process for HfO/sub 2/ Ge pMOSFETs using SiH/sub 4/ surface annealing prior to HfO/sub 2/ deposition. By using SiH/sub 4/ passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO/sub 2/ Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a /spl sim/140% higher peak mobility than that of the device with surface nitridation.
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Wu et al. (2004) studied this question.
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