The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides (n-MOSFET)

The time-dependent creation of interface traps N/sub it/, in irradiated MOS devices has been studied in oxides which were annealed in either deuterium or hydrogen. It is found that the rate of N/sub it/, buildup is significantly retarded in the deuterium-annealed oxides. It is noted that this result demonstrates conclusively that hydrogen must be involved in the N/sub it/, creation process.>