Field Intensity Distribution in Hetero-Structure Laser

The computer aided simulation tools are of significant interest to access the device performance and to know in advance the device behavior before the actual fabrication and characterization process. We have carried out the numerical simulation of hetero-structure laser in the direction to develop an indigenous design tool which enables to better understand internal device physics and to optimize various structural, physical and material parameters which are required in the design of semiconductor laser. This simulation has been carried out using static device modeling approach for the analysis and optimization of various physical parameters. The wave equation is solved to get the optical field intensity distribution in various layers across the device is obtained. The modal analysis of optical confinement in three Layer hetero-structures are carried out to obtain the optimized set of structural parameters for maximum intensity. The basic electrical equations have also been implemented in discretized form and solved numerically to obtain the electrostatic potential and quasi Fermi potential at various nodes across the finite difference mesh of the device structure. The self-consistent solution of basic electrical and optical equations has been obtained by iterative solution procedure. The Simulation program is interactive and generates 3D surface profiles for optical intensity, electrostatic potential, quasi Fermi potential, carrier density distribution etc. at mesh nodes in the device. The other results are presented in graphical form for various combinations of material and structural parameters