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October 2, 2000Applied Physics Letters

Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy

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Authors

AAA. AyabeOsaka Research Institute of Industrial Science and TechnologyHAH. AsahiThe University of OsakaHLH. J. LeeThe University of Osaka

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Ayabe et al. (2000) studied this question.

synapsesocial.com/papers/6a910fdb647f40dea9c1b021https://doi.org/10.1063/1.1314881
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy1997 · 16 citations
  2. 2Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy1999 · 10 citations
  3. 3InTlP — a proposed infrared detector material1994 · 91 citations
  4. 4Ultrafast carrier dynamics and saturable absorption in HgCdTe1996 · 21 citations
  5. 5New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful Growth1996 · 68 citations