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PLZT and PZTN thin films were successfully grown by MOCVD. The effects of La and Nb modification on the electrical properties were investigated. The Pr, Ec and current densities of the PLZT and PZTN films decreased as the La and Nb contents increased. An improvement in switching fatigue by the modification of La and Nb was observed. However PLZT and PZTN films also showed smaller switching charge densities than those of non-doped PZT films.
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Shimizu et al. (1997) studied this question.
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