The current status of four technologies for manufacturing radiation-hardened complementary metal-oxide-semiconductor integrated circuits is presented. The technologies include both aluminum-gate and silicon-gate CMOS structures formed on bulk-silicon and on silicon-on-sapphire (SOS) substrates. The hardness levels achieved on large-scale integrated circuits fabricated in each of these technologies is given. In addition some historical background is included.
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H. Borkan (1977) studied this question.
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