Monte carlo determination of hot electron galvanomagnetic effects in gallium arsenide

A Monte Carlo technique has been used to calculate the transport properties of n-type GaAs at room temperature in crossed electric and magnetic fields. The magnetic and electric field dependence of the distribution function, mobility, electron mean energy, population ratio, average drift velocity, Hall angle, and Hall coefficient has been investigated. It is found that when a Hall field is able to develop (long sample) the influence of the magnetic field is small although a large Hall field appears across the sample. However, when the Hall field is shorted (short sample) a strong pseudo-magnetoresistance is produced which for high enough magnetic fields inhibits the negative differential mobility of GaAs.