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A systematic experimental investigation of the influence of the silicon film thickness on the properties of accumulation-mode SOI MOSFET's has been performed, and the relevant original results are presented. Interface coupling mechanisms and their effects on the major device parameters (threshold voltages, subthreshold swing, and transconductance) are analyzed. The feasibility of ultrathin accumulation-mode SIMOX MOSFET's for future submicrometer applications is demonstrated and discussed. Floating-body effects, which stand as critical aspects for SOI devices, are also investigated and the benefit of the silicon film thinning on the breakdown behavior of accumulation-mode devices is clearly established.>
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Faynot et al. (1995) studied this question.
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