Answers are grounded in this paper and cite their sources.
GaAs grown by liquid phase epitaxy (LPE) and free from deep levels is well suited for studying vanadium-related levels in bulk GaAs. LPE growth of GaAs:V was carried out and it is found from deep-level transient spectroscopy (DLTS) that vanadium gives rise to an electron trap at 0.19+or-0.01 eV below the conduction band edge with a capture cross section of 4*10 -16 cm 2 . This could be a level different from the electron trap at 0.14 eV reported for LEC-grown GaAs:V due to the formation of different complexes under different growth conditions.
No takes yet. Share an insight, caveat, or question.
Balasubramanian et al. (1992) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: