Neutron Fluence and Electric Field Strength Dependencies of the Rate of Volume Damage Introduction in Silicon P-N Junctions

The anamolous behavior of neutron-induced defect clusters in the high field space-charge region of silicon p-n junctions is investigated. The space-charge region recombination current variation with neutron fluence and the junction electric field strength present during irradiation is examined and an electric field strength dependence for the defect clusters is found to exist. The space-charge region rate of volume damage introduction is observed to be a function of both neutron fluence and the junction electric field strength present during irradiation. An empirical expresion for the dependence of the rate of volume damage introduction on fluence and junction field strength present during irradiation is developed. Possible mechanisms for the observed field dependence are discussed.