Evidence of negative charge trapping in high temperature annealed thermal oxide

The effect of high temperature processing of Si/SiO/sub 2//Si sandwich structures has been studied on a thermal dry oxide, by considering charge trapping after irradiation. The radiation-induced charge trapping is shown to be very different in annealed and unannealed structures. The latter reveal interfacial trapping behavior, whereas annealed structures exhibit a large trapping of both holes and electrons in the bulk of the oxide, similar to SIMOX oxide behavior.>