Enhanced displacement damage effectiveness in irradiated silicon devices

Measurements and analyses have been performed to investigate enhanced displacement damage effectiveness in charge-coupled devices irradiated with 14-MeV neutrons and with 100-MeV protons. The thermal activation energies associated with single-particle-induced dark current events are observed to vary over the range 0.3-0.7 eV, with anomalously large events exhibiting relatively small values (>