Proton Energy Dependence of SiC Power MOSFET Single-Event Burnout Sensitivity

The proton energy dependence of single-event burnout (SEB) sensitivity of silicon carbide (SiC) power MOSFETs is studied. The experimental results show that SEB is dependent on the primary proton energy and the drain bias voltage applied during irradiation. The secondary particles, produced by the nuclear reactions between primary particles and device materials, are studied using Geant4 simulations. A method for finding the criteria for the failure based on experimental radiation data and Geant4 simulation data is presented.