Temperature Dependence of Heavy-Ion-Induced Leakage Current in SiC Power MOSFETs

Temperature dependence of the heavy-ion-induced leakage current in silicon carbide (SiC) power MOSFETs has been studied. The devices exhibit an order of magnitude lower degradation rate for drain current at elevated temperatures compared to the values measured at room temperature. The degradation rates at different drain voltages and different temperatures were determined. The effect of temperature on the degradation of device parameters is presented, and the degradation mechanisms and implications to the power applications in radiation environments are discussed.