Morphology and growth process of thermally induced oxide precipitates in Czochralski silicon

The morphology and growth process of oxide precipitates in Czochralski silicon have been studied with prolonged thermal treatments up to 700 h at intermediate temperatures (700–900 °C). It was found with transmission electron microscopy observation that (i) the morphology of precipitates changes from platelet to aggregation of polyhedra at both 800 and 900 °C during isothermal heat treatment, and (ii) the growth of platelet precipitates follows a t1/2 law.