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Nonradiative electron-hole(e-h) recombination characteristics have been investigated for a dominant mid-gap electron trap (0.86 eV) related to oxygen-complex defect center in MBE-grown Al x Ga 1- x As films( x =0.4) by means of an extended capacitance-transient spectroscopy technique. Direct evidence is presented to demonstrate that the 0.86 eV defect level plays an important role as an efficient electron-hole nonradiative recombination channel as well as an electron capture and emission center role accompanied with strong lattice relaxation.
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Ando et al. (1987) studied this question.
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