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The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous at the center of the pillar, mainly due to the impact of top-to-bottom tapering on the electrical characteristics of the floating gate (FG) cells and, to a smaller extent, to a different generation of neutron secondaries as a function of depth.
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Gerardin et al. (2023) studied this question.
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